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| ESM2012DV NPN DARLINGTON POWER MODULE s s s s s s s HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION TO CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL s UPS s DC/DC & DC/AC CONVERTERS s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEV VEBO IC ICM IB I BM Pt ot T stg Tj VI SO Parameter Collector-Emitter Voltage (VBE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 150 120 7 120 180 2 4 175 -55 to 150 150 2500 Unit V V V A A A A W o o o VCEO(sus) Collector-Emitter Voltage (IB = 0) C C C 1/8 September 1997 ESM2012DV THERMAL DATA R thj-ca se R thj-ca se R t hc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied o Max Max Max 0.7 0.9 0.05 o o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol I CER # I CEV # I EBO # Parameter Collecto r Cut-of f Current (RBE = 5 ) Collecto r Cut-of f Current (VBE = -5V) Test Conditions VCE = VCEV VCE = VCEV VCE = VCEV VCE = VCEV T j = 100 o C T j = 100 o C Min. Typ. Max. 1. 5 10 1 7 1 125 1200 1.25 1.35 1.5 1.65 2.3 2.35 200 230 2 1.8 0.9 0.15 0.3 125 3 2. 5 2 0. 3 0. 6 1. 5 2 3 V V V V V V A/s V V s s s V Unit mA mA mA mA mA V Emitter Cut-off Current VEB = 5 V (I C = 0) IC = 5 A L = 15 mH Vc lamp = 125 V I C = 100 A IC IC IC IC = = = = 70 A 70 A 100 A 100 A VCE = 5 V IB IB IB IB = = = = 0.25 A 0.25 A Tj = 100 o C 1A 1 A T j = 100 oC T j = 100 oC VCEO(SUS) * Collecto r-Emitter Sustaining Voltage hFE V CE(sat ) DC Current Gain Collecto r-Emitter Saturation Voltage VBE( sat) diC /dt Base-Emitter Saturation Voltage Rate of Rise of On-state Collector I C = 100 A I C = 100 A VCC = 90 V I B1 = 0.5 A VCC = 90 V I B1 = 0.5 A VCC = 90 V I B1 = 0.5 A IB = 1 A IB = 1 A RC = 0 tp = 3 s T j = 100 o C RC = 1.3 Tj = 100 o C RC = 1.3 Tj = 100 o C VCC = 90 V RBB = I B1 = 0.25 A T j = 100 o C IB1 = 1A VCC = 90 V RBB = 1.2 5 T j = 100 o C IF = 100 A L < 0.05 H * VCE (3 s)* Collecto r-Emitter Dynamic Voltage * V CE (5 s)* Collector-Emitte r Dynamic Voltage ts tf tc VCEW Storage Time Fall Time Cross-over Time Maximum Collector Emitter Voltage With ou t Snubber I C = 70 A VBB = -5 V Vc lamp = 125 V L = 60 H I CW off = 120 A VBB = -5 V L = 60 H T j = 125 o C VF I RM Diode Forward Voltage I F = 100 A Reverse Recovery Current 0.92 10 1 14 V A VCC = 125 V diF /dt = -200 A/s T j = 100 o C Pulsed: Pulse duration = 300 s, duty cycle 1.5 % # See test circuits in databook introduction To evaluate the conduction losses of the diode use the following equations: VF = 0.66 + 0.0034 IF P = 0.66 IF(AV) + 0.0034 I2F(RMS) 2/8 ESM2012DV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM2012DV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/8 ESM2012DV Dc Current Gain Typical VF Versus IF Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit Turn-on Switching Waveforms 5/8 ESM2012DV Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode 6/8 ESM2012DV ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J C K L M H 7/8 ESM2012DV Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 8/8 |
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